Comparsion between poly emitter bipolar characteristics with and without native oxide layers under various processes

Y. Niitsu*, M. Norishima, G. Sasaki, H. Iwai, K. Maeguchi

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

The effect of the interfacial native oxide layer between polycrystalline and single-crystal Si was investigated in the submicron-rule bipolar and BiCMOS processes. It was found that the native oxide increases the current gain, but significantly degrades bipolar transistor performance. Bipolar transistors without the oxide layer, fabricated by different methods, were investigated. Without the layer, low emitter resistance and small current gain variation were achieved for a low-temperature process. The current gain reduction due to the lack of the oxide layer does not degrade the cutoff frequency. Improved performance for structures without native oxide was confirmed with ECL (emitter-coupled logic) ring oscillators.

Original languageEnglish
Pages98-101
Number of pages4
StatePublished - 1989
EventProceedings of the 1989 Bipolar Circuits and Technology Meeting - Minneapolis, MN, USA
Duration: 18 Sep 198919 Sep 1989

Conference

ConferenceProceedings of the 1989 Bipolar Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period18/09/8919/09/89

Fingerprint Dive into the research topics of 'Comparsion between poly emitter bipolar characteristics with and without native oxide layers under various processes'. Together they form a unique fingerprint.

Cite this