Comparison study of SnO2 thin- and thick-film gas sensors

Sang Woo Lee; Ping Ping Tsai; H. D. Chen

doi:10.1016/S0925-4005(00)00390-7

Comparison study of SnO₂ thin- and thick-film gas sensors

Sang Woo Lee, Ping Ping Tsai, H. D. Chen

International College of Semiconductor Technology

Research output: Contribution to journal › Article

75 Scopus citations

Abstract

Polycrystalline SnO₂ thin films were prepared at 600°C by metal organic chemical vapor deposition (MOCVD) technique using tetraethyltin as an organometallic (OM) source and UHP O₂ as oxidant. The films were analyzed by means of XRD, SEM, and AES for their microstructure characterization and subjected to H₂ and CO gas detection. The results were compared to SnO₂ thick-films derived from metal organic decomposition (MOD) in order to study differences in gas sensing characteristics in relation to the microstructure. The microstructure of the MOCVD-derived thin films was fully dense columnar structure with rough surface morphology while that of the MOD-derived thick films was porous structure resulting from loosely interconnected small crystallites. Both types of sensors showed good reproducibility and stability toward 1% H₂ gas with an enhancement of the sensitivity and the time response in the thick-film sensor. The sensing characteristics were degraded under 1% CO gas for both types of films.

Original language	English
Pages (from-to)	122-127
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	67
Issue number	1
DOIs	https://doi.org/10.1016/S0925-4005(00)00390-7
State	Published - 10 Aug 2000

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Lee, S. W., Tsai, P. P., & Chen, H. D. (2000). Comparison study of SnO₂ thin- and thick-film gas sensors. Sensors and Actuators, B: Chemical, 67(1), 122-127. https://doi.org/10.1016/S0925-4005(00)00390-7

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abstract = "Polycrystalline SnO2 thin films were prepared at 600°C by metal organic chemical vapor deposition (MOCVD) technique using tetraethyltin as an organometallic (OM) source and UHP O2 as oxidant. The films were analyzed by means of XRD, SEM, and AES for their microstructure characterization and subjected to H2 and CO gas detection. The results were compared to SnO2 thick-films derived from metal organic decomposition (MOD) in order to study differences in gas sensing characteristics in relation to the microstructure. The microstructure of the MOCVD-derived thin films was fully dense columnar structure with rough surface morphology while that of the MOD-derived thick films was porous structure resulting from loosely interconnected small crystallites. Both types of sensors showed good reproducibility and stability toward 1% H2 gas with an enhancement of the sensitivity and the time response in the thick-film sensor. The sensing characteristics were degraded under 1% CO gas for both types of films.",

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AB - Polycrystalline SnO2 thin films were prepared at 600°C by metal organic chemical vapor deposition (MOCVD) technique using tetraethyltin as an organometallic (OM) source and UHP O2 as oxidant. The films were analyzed by means of XRD, SEM, and AES for their microstructure characterization and subjected to H2 and CO gas detection. The results were compared to SnO2 thick-films derived from metal organic decomposition (MOD) in order to study differences in gas sensing characteristics in relation to the microstructure. The microstructure of the MOCVD-derived thin films was fully dense columnar structure with rough surface morphology while that of the MOD-derived thick films was porous structure resulting from loosely interconnected small crystallites. Both types of sensors showed good reproducibility and stability toward 1% H2 gas with an enhancement of the sensitivity and the time response in the thick-film sensor. The sensing characteristics were degraded under 1% CO gas for both types of films.

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