Comparison of wideband Gilbert micromixers using sige HBT and GaInP/GaAs HBT technologies

Jin Siang Syu, Chin-Chun Meng, Chih Kai Wu, Guo Wei Huang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Wideband downconversion mixers are demonstrated by using both 0.35-pm SiGe heterojunction bipolar transistor (HBT) and 2-μm GaInP/GaAs HBT technologies. A micromixer topology is implemented in the RF port while a differential type shunt-shunt feedback amplifier and a differential-to-single CE-CC output buffer are used in the IF stage. The frequency response analysis and systematic measurement approach for a wideband Gilbert mixer are proposed in this article for each individual stage of local frequency (LO), radio frequency (RF), and intermediate frequency (IF). The differential LO signals are generated by several off-chip 180° hybrids to cover more than 8;1 bandwidth. The SiGe HBT Micromixer achieves the conversion gain of 6 dB, IP1dB of -17.5 dBm, and IIP3 of -7 dBm with the 3.3-V supply voltage and the power consumption of 37.5 mW. On the other hand, the GaInP/GaAs HBT Micro-mixer achieves the conversion gain of 25 dB, IP1dB of -25 dBm, and IIP 3 of -15 dBm with the 5-V supply voltage and the power consumption of 50 mW.

Original languageEnglish
Pages (from-to)2254-2257
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume50
Issue number9
DOIs
StatePublished - 1 Sep 2008

Keywords

  • CE-CC
  • GaInP/GaAs
  • Heterojunction bipolar transistor (HBT)
  • Micromixer
  • Shunt-shunt feedback
  • SiGe

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