Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

Tung Ming Pan*, Tan Fu Lei, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

Original languageEnglish
Pages (from-to)3447-3452
Number of pages6
JournalJournal of Applied Physics
Volume89
Issue number6
DOIs
StatePublished - 15 Mar 2001

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