The characteristics of polyoxides grown by different methods in order to find the best way of growing high qualities of polyoxide were investigated in this work. Thermal, rapid thermal oxidation (RTO), and tetraethylorthosilicate (TEOS) deposition methods were used to grow the polyoxides. RTO provided a smoother interface of polyoxide/polysilicon than that of thermal furnace method. TEOS deposition method resulted in a smooth polyoxide/poly-1 interface due to no polysilicon consumption. The polyoxide grown by thermal method had the worst characteristics, while the post-deposition RTO method had the best qualities (low leakage current, high breakdown electric field, low voltage shift, and high charge-to-breakdown). The high qualities of polyoxide grown by post-deposition RTO method were due to the smooth polyoxide/poly-1 interface and less electron trapping.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|State||Published - 1 Oct 1999|