Comparison of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by both IMPRINT and IMPRINT-excimer loser annealing (ELA) methods was investigated. IMPRINT poly-Si was fabricated by pressing imprint mold (coated with Ni film) together with amorphous Si film and then annealing at 550°C. After the sample stack was separated, IMPRINT poly-Si film was irradiated by an excimer laser to form IMPRINT-ELA poly-Si. Upon increasing the laser energy to 345 mJ cm2, the performance of IMPRINT-ELA-TFT was found to be far superior to that of IMPRINT-TFT due to larger grains and fewer intragrain defects of the IMPRINT-ELA poly-Si film than that of the IMPRINT poly-Si film. The mobility of the IMPRINT-ELA-TFT was 413 cm2 V s, which was 31.7 times higher than that of the IMPRINT-TFT. The on/off current ratio of the IMPRINT-ELA-TFT was 4.24× 106, which was two orders magnitude higher than that of the IMPRINT-TFT.