Comparison of shunt-series shunt-shunt and shunt-series series-shunt dual feedback wideband amplifiers

Jin Siang Syu*, Tzung H. Wu, Chin-Chun Meng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The shunt-series shunt-shunt and shunt-series series-shunt dual feedback amplifiers are demonstrated in this paper using 2-μm GaInP/GaAs HBT technology. The shunt-series shunt-shunt and shunt-series series-shunt wideband amplifiers achieve a small-signal gain of 31/33 dB with the same 3-dB bandwidth of 6 GHz. The noise figure of both amplifiers is below 3 dB from dc to 10 GHz. In addition, shunt-series shunt-shunt wideband amplifiers without and with a common-drain (CD) configuration are demonstrated using 0.35-μm CMOS technology. As a result, the amplifier without/with a CD configuration achieves the power gain of 15/18 dB and noise figure of 9.5/10dB, respectively, at a supply voltage of 3.3 V.

Original languageEnglish
Title of host publication2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010
DOIs
StatePublished - 8 Jun 2010
Event2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010 - Melbourne, FL, United States
Duration: 12 Apr 201013 Apr 2010

Publication series

Name2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010

Conference

Conference2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010
CountryUnited States
CityMelbourne, FL
Period12/04/1013/04/10

Keywords

  • CMOS
  • GaInP/GaAs heterojunction bipolar transistor (HBT)
  • Kukielka amplifier
  • Meyer amplifier
  • Wideband amplifier

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