Comparison of short-channel effect and offstate leakage in symmetric vs. asymmetric double gate MOSFETs

Stephen H. Tang*, Peiqi Xuan, Jeffrey Bokor, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

13 Scopus citations

Abstract

Short channel effects and offstate leakages in symmetric and asymmetric double gate MOSFETs were compared. The short-channel leakage current was explained by analyzing the change in the channel potential barrier. Identical structures were used for symmetric and asymmetric MOSFETs. The only difference was in the workfunctions of gates. Potential barrier in Symmetric device had better limiting leakage than in asymmetric device because of a narrower channel in short-channel devices.

Original languageEnglish
Pages120-121
Number of pages2
StatePublished - 1 Dec 2000

Fingerprint Dive into the research topics of 'Comparison of short-channel effect and offstate leakage in symmetric vs. asymmetric double gate MOSFETs'. Together they form a unique fingerprint.

Cite this