Short channel effects and offstate leakages in symmetric and asymmetric double gate MOSFETs were compared. The short-channel leakage current was explained by analyzing the change in the channel potential barrier. Identical structures were used for symmetric and asymmetric MOSFETs. The only difference was in the workfunctions of gates. Potential barrier in Symmetric device had better limiting leakage than in asymmetric device because of a narrower channel in short-channel devices.
|Number of pages||2|
|State||Published - 1 Dec 2000|