Comparison of quantum correction models for ultratin oxide single- and double-gate MOS structures under the inversion conditions

Yi-Ming Li, Shao Ming Yu, Chien Shao Tang, Teng Sheng Chao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this paper various quantum correction models for single- and double-gate MOS structures have been investigated and compared systematically. To accurately model the quantum effects for nanoscale MOS device with different structures, a unified quantum correction model is also presented. The position of the charge concentration peak, the maximum of the charge concentration, the total inversion charge sheet density, and the average inversion charge depth are examined simultaneously in the comparison of models. Among the results we have found the physical quantity calculated with our model is more close to the result of Schrodinger-Poisson equations.

Original languageEnglish
Title of host publication2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings
PublisherIEEE Computer Society
Pages36-39
Number of pages4
ISBN (Electronic)0780379764
DOIs
StatePublished - 15 Sep 2003
Event2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - San Francisco, United States
Duration: 12 Aug 200314 Aug 2003

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume1
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003
CountryUnited States
CitySan Francisco
Period12/08/0314/08/03

Keywords

  • Electrons
  • Information science
  • Information systems
  • Laboratories
  • MOS devices
  • MOSFETs
  • Nanoscale devices
  • Poisson equations
  • Quantum computing
  • Quantum mechanics

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