Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors

D. Z. Peng; Hsiao-Wen Zan; P. S. Shih; T. C. Chang; C. W. Lin; C. Y. Chang

doi:10.1016/S0042-207X(02)00255-5

Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors

D. Z. Peng^*, Hsiao-Wen Zan, P. S. Shih, T. C. Chang, C. W. Lin, C. Y. Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The ultra-high vacuum chemical vapor deposition (UHVCVD) system can deposit poly-Si film without any laser or furnace annealing. The uniformity of threshold voltage and mobility is superior to that deposited by low-pressure chemical vapor deposition (LPCVD) system. However, due to the deposition in polycrystalline phase for UHVCVD, the film surface is rough and results in low field effect mobility compared to that obtained by LPCVD using disilane (Si₂H₆) in amorphous phase followed by solid phase crystallization (SPC). The on-off current ratio for UHVCVD deposited poly-Si thin film transistors (TFTs) is approximately one order smaller, however, the leakage current for LPCVD SPC TFTs is higher. In this experiment, NH₃ was introduced to both of the two samples to improve the device performance. It can be shown that improvements on device characteristics are more significant for UHVCVD deposited poly-Si TFTs, e.g. threshold voltage decreased dramatically and the on-off current ratio improved by two orders of magnitude.

Original language	English
Pages (from-to)	641-645
Number of pages	5
Journal	Vacuum
Volume	67
Issue number	3-4
DOIs	https://doi.org/10.1016/S0042-207X(02)00255-5
State	Published - 26 Sep 2002

Keywords

Low-pressure chemical vapor deposition (LPCVD)
Plasma passivation
Poly-Si
Solid phase crystallization (SPC)
TFT
Ultra-high vacuum chemical vapor deposition (UHVCVD)

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title = "Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors",

abstract = "The ultra-high vacuum chemical vapor deposition (UHVCVD) system can deposit poly-Si film without any laser or furnace annealing. The uniformity of threshold voltage and mobility is superior to that deposited by low-pressure chemical vapor deposition (LPCVD) system. However, due to the deposition in polycrystalline phase for UHVCVD, the film surface is rough and results in low field effect mobility compared to that obtained by LPCVD using disilane (Si2H6) in amorphous phase followed by solid phase crystallization (SPC). The on-off current ratio for UHVCVD deposited poly-Si thin film transistors (TFTs) is approximately one order smaller, however, the leakage current for LPCVD SPC TFTs is higher. In this experiment, NH3 was introduced to both of the two samples to improve the device performance. It can be shown that improvements on device characteristics are more significant for UHVCVD deposited poly-Si TFTs, e.g. threshold voltage decreased dramatically and the on-off current ratio improved by two orders of magnitude.",

keywords = "Low-pressure chemical vapor deposition (LPCVD), Plasma passivation, Poly-Si, Solid phase crystallization (SPC), TFT, Ultra-high vacuum chemical vapor deposition (UHVCVD)",

author = "Peng, {D. Z.} and Hsiao-Wen Zan and Shih, {P. S.} and Chang, {T. C.} and Lin, {C. W.} and Chang, {C. Y.}",

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AU - Peng, D. Z.

AU - Zan, Hsiao-Wen

AU - Shih, P. S.

AU - Chang, T. C.

AU - Lin, C. W.

AU - Chang, C. Y.

PY - 2002/9/26

Y1 - 2002/9/26

N2 - The ultra-high vacuum chemical vapor deposition (UHVCVD) system can deposit poly-Si film without any laser or furnace annealing. The uniformity of threshold voltage and mobility is superior to that deposited by low-pressure chemical vapor deposition (LPCVD) system. However, due to the deposition in polycrystalline phase for UHVCVD, the film surface is rough and results in low field effect mobility compared to that obtained by LPCVD using disilane (Si2H6) in amorphous phase followed by solid phase crystallization (SPC). The on-off current ratio for UHVCVD deposited poly-Si thin film transistors (TFTs) is approximately one order smaller, however, the leakage current for LPCVD SPC TFTs is higher. In this experiment, NH3 was introduced to both of the two samples to improve the device performance. It can be shown that improvements on device characteristics are more significant for UHVCVD deposited poly-Si TFTs, e.g. threshold voltage decreased dramatically and the on-off current ratio improved by two orders of magnitude.

AB - The ultra-high vacuum chemical vapor deposition (UHVCVD) system can deposit poly-Si film without any laser or furnace annealing. The uniformity of threshold voltage and mobility is superior to that deposited by low-pressure chemical vapor deposition (LPCVD) system. However, due to the deposition in polycrystalline phase for UHVCVD, the film surface is rough and results in low field effect mobility compared to that obtained by LPCVD using disilane (Si2H6) in amorphous phase followed by solid phase crystallization (SPC). The on-off current ratio for UHVCVD deposited poly-Si thin film transistors (TFTs) is approximately one order smaller, however, the leakage current for LPCVD SPC TFTs is higher. In this experiment, NH3 was introduced to both of the two samples to improve the device performance. It can be shown that improvements on device characteristics are more significant for UHVCVD deposited poly-Si TFTs, e.g. threshold voltage decreased dramatically and the on-off current ratio improved by two orders of magnitude.

KW - Low-pressure chemical vapor deposition (LPCVD)

KW - Plasma passivation

KW - Poly-Si

KW - Solid phase crystallization (SPC)

KW - TFT

KW - Ultra-high vacuum chemical vapor deposition (UHVCVD)

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JO - Vacuum

JF - Vacuum

SN - 0042-207X

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ER -

Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors

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Keywords

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