Comparison of performance and stability of tungsten-doped indium oxide thin film transistor with SiO, SiN and SiO/SiN as gate insulators

Po Wen Chen, Chih Hsiang Chang, Po-Tsun Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we investigated the performance and stability of thin-film transistors with tungsten-doped indium oxide as channel layer, which were deposited on SiO, SiN and SiO/SiN. Positive/Negative bias stress were performed to explore the electrical reliability of IWO TFT with different gate insulators.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages674-675
Number of pages2
ISBN (Electronic)9781510845503
StatePublished - 1 Jan 2015
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 9 Dec 201511 Dec 2015

Publication series

NameProceedings of the International Display Workshops
Volume2
ISSN (Print)1883-2490

Conference

Conference22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period9/12/1511/12/15

Keywords

  • Gate insulator
  • Thin-film transistors
  • Tungsten oxide

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    Chen, P. W., Chang, C. H., & Liu, P-T. (2015). Comparison of performance and stability of tungsten-doped indium oxide thin film transistor with SiO, SiN and SiO/SiN as gate insulators. In 22nd International Display Workshops, IDW 2015 (pp. 674-675). (Proceedings of the International Display Workshops; Vol. 2). International Display Workshops.