Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs

C. T. Chan*, C. H. Kuo, C. J. Tang, M. C. Chen, Ta-Hui Wang, S. Huang Lu, H. C. Hu, T. F. Chen, C. K. Yang, M. T. Lee, D. Y. Wu, J. K. Chen, S. C. Chien, S. W. Sun

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Accelerated oxide breakdown progression in ultra-thin oxide (1.4nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.

Original languageEnglish
Pages49-52
Number of pages4
StatePublished - 1 Dec 2004
EventProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
Duration: 5 Jul 20048 Jul 2004

Conference

ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
CountryTaiwan
Period5/07/048/07/04

Keywords

  • Body potential
  • Breakdown progression
  • Carrier temperature
  • SOI pMOS

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