Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors

M. C. Chen*, S. H. Ku, C. T. Chan, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A oxide breakdown (BD) progression in ultra-thin oxide silicon-on-insulator (SOI) and bulk metal-oxide-semiconductor field effect transistors (MOSFET) was investigated. It was observed that the enhanced BD progression was due to the increase of hole stress current resulting from breakdown induced channel carrier heating in a floating-body configuration. The hole tunneling current and hot carrier luminescence measurement were analyzed numerically. The hole stress current was found to be dominated the gate stress during BD evolution and was increased with a forward body bias.

Original languageEnglish
Pages (from-to)3473-3477
Number of pages5
JournalJournal of Applied Physics
Volume96
Issue number6
DOIs
StatePublished - 15 Sep 2004

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