Comparison of Ni-metal induced lateral crystallization thin-film transistors fabricated by rapid thermal annealing and conventional furnace annealing at 565 °C

Chen-Ming Hu*, Yew-Chuhg Wu, Jun Wei Gong

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Two annealing methods, pulse rapid thermal annealing (RTA) and conventional furnace annealing (CFA), were used to fabricate nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) at 565 °C. It was found that the growth rate of RTA-POLY was 5 times higher than that of CFA-POLY. The performance of RTA-thin-film transistors (TFTs) was not as good as that of CFA-TFT. RTA-TFT showed lower drain current, higher threshold voltage, larger subthreshold swing, lower electron mobility, and lower leakage current than CFA-TFT.

Original languageEnglish
Pages (from-to)7204-7207
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number11
DOIs
StatePublished - 6 Nov 2007

Keywords

  • CFA
  • NILC
  • Polycrystalline silicon
  • RTA
  • Thin-film transistor

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