Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

D. K. Sengupta*, J. L. Malin, S. I. Jackson, W. Fang, W. Wu, Hao-Chung Kuo, C. Rowe, S. L. Chuang, K. C. Hsieh, J. R. Tucker, J. W. Lyding, M. Feng, G. E. Stillman, H. C. Liu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

Original languageEnglish
Pages (from-to)203-208
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume421
StatePublished - 1 Dec 1996
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: 8 Apr 199612 Apr 1996

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