Comparison of MONOS memory device integrity when using Hf 1-x-y N x O y trapping layers with different N compositions

H. J. Yang*, C. F. Cheng, W. B. Chen, S. H. Lin, F. S. Yeh, S. P. McAlister, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

We have studied the nitrogen composition dependence of the characteristics of TaN/HfLaON/Hf 1-x-y N x O y SiO 2 Si MONOS memory devices. By increasing the N composition in the Hf 1-x-y N x O y trapping layer, both the memory window and high-temperature retention improved. The Hf 0.3 N 0.2 O 0.5 MONOS device displayed good characteristics in terms of its ±9-V program/erase (P/E) voltage, 100-μs P/E speed, large initial 2.8-V memory window, and a ten-year extrapolated retention of 1.8 V at 85 °C or 1.5 V at 125 °C.

Original languageEnglish
Pages (from-to)1417-1423
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume55
Issue number6
DOIs
StatePublished - 1 Jun 2008

Keywords

  • Erase
  • High-κ
  • Nonvolatile memory
  • Program

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