Comparison of MiM performance with various electrodes and dieletric in Cu dual damascene of CMOS MS/RF technology

M. C. King*, C. F. Chang, H. J. Lin, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this paper, we have compared the performance of metal-insulator-metal (MiM) capacitors for different bottom electrode materials including Cu, TaN, and Al in Cu-back-end-of-the-line (BEOL) process. A high-performance and low-defect-density MiM capacitor for mixed-signal and radio frequency (MS/RF) technology based on a 130 nm complementary metal oxide semiconductor (CMOS) process was demonstrated. Q-factor can achieve >100 for both Cu and Al at 2.4 GHz with 0.7 pF MiM capacitors. TaN showed a low Q-factor (<60) due to high resistivity. The process incorporates aluminum electrode into Cu-BEOL for MiM capacitor with a cost-effective process. The roughness of electro-dielectric interface by a thin aluminum electrode is critical for MiM performance due to field enhancement by roughness of a thin aluminum electrode. We have demonstrated a way to eliminate the roughness effect of thin Al and provide a MiM capacitor with high performance and low defect density. In particular, a method is demonstrated to achieve better matching, leakage, electrical breakdown, and temperature coefficient of capacitance performance for MiM capacitors.The Electrochemical Society

Original languageEnglish
Article number024612JES
JournalJournal of the Electrochemical Society
Volume153
Issue number12
DOIs
StatePublished - 14 Nov 2006

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