Comparison of Intrinsic Gettering and Epitaxial Wafers in Terms of Soft Error Endurance and Other Characteristics of 64k Bit Dynamic RAM

Hiroshi Iwai, Hideo Otsuka, Yasuo Matsumotc, Kiyoshi Hisatomi, Kyoji Aoki

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Intrinsic gettering (1G) and P/P+ epitaxial wafers are compared in terms of soft error endurance and other characteristics of a 64k bit dynamic RAM. It was confirmed that soft error rate is improved in IG wafers, while it is deteriorated in P/P+ epitaxial wafers. However, when epitaxial layer thickness is reduced to a certain value, the soft error rate tends to be improved. Several other characteristics of 64k bit DRAM's were also evaluated for devices made on IG and epitaxial wafers with various denuded zone (DZ) widths and epitaxial layer thicknesses, respectively.

Original languageEnglish
Pages (from-to)1149-1151
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume31
Issue number9
DOIs
StatePublished - Sep 1984

Fingerprint Dive into the research topics of 'Comparison of Intrinsic Gettering and Epitaxial Wafers in Terms of Soft Error Endurance and Other Characteristics of 64k Bit Dynamic RAM'. Together they form a unique fingerprint.

  • Cite this