Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs pseudomorphic high electron mobility transistors

Chung Er Huang*, Chien Ping Lee, Ron Ting Huang, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We have studied the DC and RF characteristics of InGaP/InGaAs/AlGaAs and InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). The InGaP gate barrier provides adequate carrier confinement for the channel carriers and at the same time eliminates the problems associated with AlGaAs. Excellent device performance was obtained for both types of devices. No short channel effect was observed at a gate length as low as 0.3 μm. The InGaP/InGaAs/AlGaAs PHEMTs are superior in that they have higher transconductance, higher current carrying capability and better RF performance. This is attributed to the better carrier confinement at the back channel. These results demonstrate that InGaP/InGaAs/AlGaAs PHEMTs are favorable candidates for microwave applications.

Original languageEnglish
Pages (from-to)6761-6763
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number12
DOIs
StatePublished - 1 Dec 2001

Keywords

  • AlGaAs
  • Carrier confinement
  • Gate length
  • InGaP
  • Microwave
  • PHEMT

Fingerprint Dive into the research topics of 'Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs pseudomorphic high electron mobility transistors'. Together they form a unique fingerprint.

  • Cite this