Comparison of hot-carrier degradation in n-and p-MOSFETs with various nitride-oxide gate films

H. Iwai*, H. S. Momose, T. Morimoto, S. Takagi, K. Yamabe

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The electrical characteristics of MOSFETs with three types of gate insulator, pure gate oxide, rapid thermal nitrided oxide, and stacked nitride oxide, were compared. While the stacked nitride oxide sample has been regarded as a highly reliable insulator for TDDB, it has lower hot carrier reliability in both threshold voltage shift and interface state generation. RTP samples have very small interface state generation during stress application, while the threshold voltage shift is comparable (nMOS case) to or even worse (pMOS case) than that for the pure oxide gate sample. The relationship between hot carrier degradation and substrate/gate current during stress is discussed.

Original languageEnglish
Title of host publicationESSDERC 1990 - 20th European Solid State Device Research Conference
EditorsW. Eccleston, P. J. Rosser
PublisherIEEE Computer Society
Pages287-290
Number of pages4
ISBN (Electronic)0750300655
StatePublished - 1990
Event20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom
Duration: 10 Sep 199013 Sep 1990

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference20th European Solid State Device Research Conference, ESSDERC 1990
CountryUnited Kingdom
CityNottingham
Period10/09/9013/09/90

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