Comparison of Hand NHtreatments for copper interconnects

Yu Min Chang, Leu-Jih Perng, Bing Hong Lin, Ying Lung Wang, Yi Lung Cheng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The surface state, electrical, and reliability characteristics of copper (Cu) interconnects after ammonia (NH or hydrogen (H plasma treatment were investigated in this study. The experimental results show that Hplasma treatment has excellent Cu oxide removal efficiency, less impact on the formation of Cu hillocks, and less damage on low-dielectric constant (low-k) dielectrics in comparison to NHplasma treatment. However, Hplasma treatment results in a higher leakage current between the Cu lines and shorter electromigration (EM) failure time due to a weaker adhesion strength at the Cu film interface. On the other hand, NHplasma treatment without the sufficient treatment time would lead to an increased probability of delamination at the Cu/barrier layer interface since the Cu oxide layer can not be completely removed. As a result, extending NHplasma treatment time can efficiently reduce the adhesion failure and enlarge EM resistance as well.

Original languageEnglish
Article number825195
JournalAdvances in Materials Science and Engineering
Volume2013
DOIs
StatePublished - 1 Dec 2013

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