Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS2

Chi Feng Li, Yun Yan Chung, Chao Ting Lin, Yen Teng Ho, Chao Hsin Chien

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, we adopted two kinds of TLM structures to extract the top (vertical) and the edge (horizontal) contact resistances of Metal/MoS2 directly from experimental results. Novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on the sapphire substrate. We found the edge contact resistivity (ρC-edge) was almost 2 orders of magnitude lower than (ρC-top). Our approach seems to be a reliable and simple way to precisely determine the edge and top contact resistances of the Metal/2D contact.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages191-193
Number of pages3
ISBN (Electronic)9781538665084
DOIs
StatePublished - Mar 2019
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 12 Mar 201915 Mar 2019

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period12/03/1915/03/19

Keywords

  • 2-step sulfurization
  • edge contact resistivity
  • Metal/2D
  • MoS
  • Nb-doped
  • TLM
  • TMD

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