Comparison of E-mode GaN HEMT using different gate oxide stack approach

Edward Yi Chang; Chia Hsun Wu; Yueh Chin Lin; Ping Cheng Han; Yu Xiang Huang; Quang Ho Luc; Jian You Chen; Yu Hsuan Ho

doi:10.1007/978-3-319-75605-9_2

Comparison of E-mode GaN HEMT using different gate oxide stack approach

Edward Yi Chang^*, Chia Hsun Wu, Yueh Chin Lin, Ping Cheng Han, Yu Xiang Huang, Quang Ho Luc, Jian You Chen, Yu Hsuan Ho

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, three different types of gate recessed E-mode GaN MIS-HEMTs were fabricated by different gate oxide stack techniques. The gate oxide stacks were designed with different oxide potential barrier, resulting in the device with different threshold voltages. Each device performance was evaluated, compared and discussed. The proposed device with charge trap gate stack showed the best device performance with high threshold voltage and high maximum drain current density in this work.

Original language	English
Title of host publication	Applied Physics, System Science and Computers II - Proceedings of the 2nd International Conference on Applied Physics, System Science and Computers, APSAC2017
Editors	Anca Croitoru, Klimis Ntalianis
Publisher	Springer Verlag
Pages	11-17
Number of pages	7
ISBN (Print)	9783319756042
DOIs	https://doi.org/10.1007/978-3-319-75605-9_2
State	Published - 1 Jan 2019
Event	2nd International Conference on Applied Physics, System Science and Computers, APSAC2017 - Dubrovnik, Croatia Duration: 27 Sep 2017 → 29 Sep 2017

Publication series

Name	Lecture Notes in Electrical Engineering
Volume	489
ISSN (Print)	1876-1100
ISSN (Electronic)	1876-1119

Conference

Conference	2nd International Conference on Applied Physics, System Science and Computers, APSAC2017
Country	Croatia
City	Dubrovnik
Period	27/09/17 → 29/09/17

Keywords

Enhancement-mode
GaN
Gate oxide
MIS-HEMTs
Potential barrier

Access to Document

10.1007/978-3-319-75605-9_2

Link to publication in Scopus

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Cite this

Chang, E. Y., Wu, C. H., Lin, Y. C., Han, P. C., Huang, Y. X., Luc, Q. H., Chen, J. Y., & Ho, Y. H. (2019). Comparison of E-mode GaN HEMT using different gate oxide stack approach. In A. Croitoru, & K. Ntalianis (Eds.), Applied Physics, System Science and Computers II - Proceedings of the 2nd International Conference on Applied Physics, System Science and Computers, APSAC2017 (pp. 11-17). (Lecture Notes in Electrical Engineering; Vol. 489). Springer Verlag. https://doi.org/10.1007/978-3-319-75605-9_2

Chang, Edward Yi ; Wu, Chia Hsun ; Lin, Yueh Chin ; Han, Ping Cheng ; Huang, Yu Xiang ; Luc, Quang Ho ; Chen, Jian You ; Ho, Yu Hsuan. / Comparison of E-mode GaN HEMT using different gate oxide stack approach. Applied Physics, System Science and Computers II - Proceedings of the 2nd International Conference on Applied Physics, System Science and Computers, APSAC2017. editor / Anca Croitoru ; Klimis Ntalianis. Springer Verlag, 2019. pp. 11-17 (Lecture Notes in Electrical Engineering).

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title = "Comparison of E-mode GaN HEMT using different gate oxide stack approach",

abstract = "In this study, three different types of gate recessed E-mode GaN MIS-HEMTs were fabricated by different gate oxide stack techniques. The gate oxide stacks were designed with different oxide potential barrier, resulting in the device with different threshold voltages. Each device performance was evaluated, compared and discussed. The proposed device with charge trap gate stack showed the best device performance with high threshold voltage and high maximum drain current density in this work.",

keywords = "Enhancement-mode, GaN, Gate oxide, MIS-HEMTs, Potential barrier",

author = "Chang, {Edward Yi} and Wu, {Chia Hsun} and Lin, {Yueh Chin} and Han, {Ping Cheng} and Huang, {Yu Xiang} and Luc, {Quang Ho} and Chen, {Jian You} and Ho, {Yu Hsuan}",

year = "2019",

month = jan,

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doi = "10.1007/978-3-319-75605-9_2",

language = "English",

isbn = "9783319756042",

series = "Lecture Notes in Electrical Engineering",

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editor = "Anca Croitoru and Klimis Ntalianis",

booktitle = "Applied Physics, System Science and Computers II - Proceedings of the 2nd International Conference on Applied Physics, System Science and Computers, APSAC2017",

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note = "null ; Conference date: 27-09-2017 Through 29-09-2017",

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Chang, EY, Wu, CH, Lin, YC, Han, PC, Huang, YX, Luc, QH, Chen, JY & Ho, YH 2019, Comparison of E-mode GaN HEMT using different gate oxide stack approach. in A Croitoru & K Ntalianis (eds), Applied Physics, System Science and Computers II - Proceedings of the 2nd International Conference on Applied Physics, System Science and Computers, APSAC2017. Lecture Notes in Electrical Engineering, vol. 489, Springer Verlag, pp. 11-17, 2nd International Conference on Applied Physics, System Science and Computers, APSAC2017, Dubrovnik, Croatia, 27/09/17. https://doi.org/10.1007/978-3-319-75605-9_2

Comparison of E-mode GaN HEMT using different gate oxide stack approach. / Chang, Edward Yi; Wu, Chia Hsun; Lin, Yueh Chin; Han, Ping Cheng; Huang, Yu Xiang; Luc, Quang Ho; Chen, Jian You; Ho, Yu Hsuan.

Applied Physics, System Science and Computers II - Proceedings of the 2nd International Conference on Applied Physics, System Science and Computers, APSAC2017. ed. / Anca Croitoru; Klimis Ntalianis. Springer Verlag, 2019. p. 11-17 (Lecture Notes in Electrical Engineering; Vol. 489).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparison of E-mode GaN HEMT using different gate oxide stack approach

AU - Chang, Edward Yi

AU - Wu, Chia Hsun

AU - Lin, Yueh Chin

AU - Han, Ping Cheng

AU - Huang, Yu Xiang

AU - Luc, Quang Ho

AU - Chen, Jian You

AU - Ho, Yu Hsuan

PY - 2019/1/1

Y1 - 2019/1/1

N2 - In this study, three different types of gate recessed E-mode GaN MIS-HEMTs were fabricated by different gate oxide stack techniques. The gate oxide stacks were designed with different oxide potential barrier, resulting in the device with different threshold voltages. Each device performance was evaluated, compared and discussed. The proposed device with charge trap gate stack showed the best device performance with high threshold voltage and high maximum drain current density in this work.

AB - In this study, three different types of gate recessed E-mode GaN MIS-HEMTs were fabricated by different gate oxide stack techniques. The gate oxide stacks were designed with different oxide potential barrier, resulting in the device with different threshold voltages. Each device performance was evaluated, compared and discussed. The proposed device with charge trap gate stack showed the best device performance with high threshold voltage and high maximum drain current density in this work.

KW - Enhancement-mode

KW - GaN

KW - Gate oxide

KW - MIS-HEMTs

KW - Potential barrier

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DO - 10.1007/978-3-319-75605-9_2

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BT - Applied Physics, System Science and Computers II - Proceedings of the 2nd International Conference on Applied Physics, System Science and Computers, APSAC2017

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A2 - Ntalianis, Klimis

PB - Springer Verlag

Y2 - 27 September 2017 through 29 September 2017

ER -

Chang EY, Wu CH, Lin YC, Han PC, Huang YX, Luc QH et al. Comparison of E-mode GaN HEMT using different gate oxide stack approach. In Croitoru A, Ntalianis K, editors, Applied Physics, System Science and Computers II - Proceedings of the 2nd International Conference on Applied Physics, System Science and Computers, APSAC2017. Springer Verlag. 2019. p. 11-17. (Lecture Notes in Electrical Engineering). https://doi.org/10.1007/978-3-319-75605-9_2