Comparison of E-mode GaN HEMT using different gate oxide stack approach

Edward Yi Chang*, Chia Hsun Wu, Yueh Chin Lin, Ping Cheng Han, Yu Xiang Huang, Quang Ho Luc, Jian You Chen, Yu Hsuan Ho

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, three different types of gate recessed E-mode GaN MIS-HEMTs were fabricated by different gate oxide stack techniques. The gate oxide stacks were designed with different oxide potential barrier, resulting in the device with different threshold voltages. Each device performance was evaluated, compared and discussed. The proposed device with charge trap gate stack showed the best device performance with high threshold voltage and high maximum drain current density in this work.

Original languageEnglish
Title of host publicationApplied Physics, System Science and Computers II - Proceedings of the 2nd International Conference on Applied Physics, System Science and Computers, APSAC2017
EditorsAnca Croitoru, Klimis Ntalianis
PublisherSpringer Verlag
Pages11-17
Number of pages7
ISBN (Print)9783319756042
DOIs
StatePublished - 1 Jan 2019
Event2nd International Conference on Applied Physics, System Science and Computers, APSAC2017 - Dubrovnik, Croatia
Duration: 27 Sep 201729 Sep 2017

Publication series

NameLecture Notes in Electrical Engineering
Volume489
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Conference

Conference2nd International Conference on Applied Physics, System Science and Computers, APSAC2017
CountryCroatia
CityDubrovnik
Period27/09/1729/09/17

Keywords

  • Enhancement-mode
  • GaN
  • Gate oxide
  • MIS-HEMTs
  • Potential barrier

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