Comparison of copper interconnect electromigration behaviors in various structures for advanced BEOL technology

M. H. Lin*, Y. L. Lin, G. S. Yang, M. S. Yeh, K. P. Chang, K. C. Su, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

Copper interconnect electromigration performance were examined in three low-k materials (k= 2.65 ∼ 3.6) using advanced BEOL technology. Comparable time to failure distribution were achieved after process optimization for each material. The Ea and n ranged from 0.8 to 0.9 eV and 1.1 to 1.4, respectively, are agreed well with the interface diffusion mechanism and a void nucleation mechanism. Various testing structures are designed to identify the EM failure modes. Extensive failure analysis was carried out to understand the failure phenomena of various test structures. Results of present study suggest that interface of Cu interconnects is the key factor for EM lifetime performance for advanced BEOL technology design rules. The weak links of interconnect system were also identified.

Original languageEnglish
Pages177-180
Number of pages4
StatePublished - 1 Dec 2004
EventProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
Duration: 5 Jul 20048 Jul 2004

Conference

ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
CountryTaiwan
Period5/07/048/07/04

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