Copper interconnect electromigration performance were examined in three low-k materials (k= 2.65 ∼ 3.6) using advanced BEOL technology. Comparable time to failure distribution were achieved after process optimization for each material. The Ea and n ranged from 0.8 to 0.9 eV and 1.1 to 1.4, respectively, are agreed well with the interface diffusion mechanism and a void nucleation mechanism. Various testing structures are designed to identify the EM failure modes. Extensive failure analysis was carried out to understand the failure phenomena of various test structures. Results of present study suggest that interface of Cu interconnects is the key factor for EM lifetime performance for advanced BEOL technology design rules. The weak links of interconnect system were also identified.
|Number of pages||4|
|State||Published - 1 Dec 2004|
|Event||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan|
Duration: 5 Jul 2004 → 8 Jul 2004
|Conference||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004|
|Period||5/07/04 → 8/07/04|