Comparison of characteristics and integration of copper diffusion-barrier dielectrics

T. C. Wang, Y. L. Cheng, Y. L. Wang*, Tsung-Eong Hsien, G. J. Hwang, C. F. Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

40 Scopus citations

Abstract

The characteristics of various copper (Cu) barrier layers, including SiN, SiCN, and SiCO, were investigated in this work. Carbon-based barrier films (SiCN and SiCO) improved the dielectric constant and line-to-line capacitance, but led to sacrifice in film deposition rate, diffusion-barrier performance, and adhesion strength to Cu in comparison with SiN films. In addition, SiN and SiCO films showed the superior electromigration (EM) performance and stress-induced void migration (SM) performance, respectively. Furthermore, the reliability results of SM and EM are strongly related to the barrier film stress characteristics and the adhesion strength between Cu layers. Therefore, optimization of the barrier layer stress and the enhancement of the interfacial condition between Cu and barrier films are crucial to significantly improve reliability.

Original languageEnglish
Pages (from-to)36-42
Number of pages7
JournalThin Solid Films
Volume498
Issue number1-2
DOIs
StatePublished - 1 Mar 2006
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 12 Nov 200414 Nov 2004

Keywords

  • Adhesion strength
  • Barrier layer
  • Capacitance
  • Low dielectric constant

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