Comparison between High-Holding-Voltage SCR and Stacked Low-Voltage Devices for ESD Protection in High-Voltage Applications

Chia Tsen Dai, Ming-Dou Ker*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The modified silicon-controlled rectifier (SCR) fabricated in a 0.25-μm high-voltage (HV) bipolar-CMOS-DMOS (BCD) technology has been proposed to seek for both effective electrostatic discharge (ESD) protection and latchup immunity. Experimental results show that one of the proposed SCRs has a high holding voltage of up to 30 V in the 100-ns transmission line pulsing measurement results. However, through the experimental verification by using the transient latchup test, the holding voltage of such proposed device decreases to 20 V. It is due to the increased bipolar junction transistor current gains of the SCR path induced by the Joule-heating effect in the long-Term measurement. For 20-V circuit applications, the ESD robustness of the proposed SCR with a holding voltage of 20 V is lower than that of stacked low-voltage p-Type MOS in the previous studies. Developing special modification of such HV devices is inefficient to achieve both effective ESD protection and latchup-free design in this 0.25-μm HV BCD technology.

Original languageEnglish
Article number8245870
Pages (from-to)798-802
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume65
Issue number2
DOIs
StatePublished - 1 Feb 2018

Keywords

  • Electrostatic discharge (ESD)
  • latchup
  • silicon-controlled rectifier (SCR)

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