@inproceedings{43545cf81cb44c75ac7b960873624ddf,
title = "Comparing RTA and laser SPE LPE annealing of Ge-epi with Si, Sn C implantation for well mobility/strain engineering",
abstract = "For undoped <1E14/cm3 Silicon-Cz wafers, hole mobility (μ h ) is reported to be 480cm2/Vs while electron mobility (μ e ) is 3.5x higher at 1500cm 2/Vs and in Germanium-Cz wafers μ h is 4x higher at 2000cm2/Vs and μ e is 3.5x higher at 4800cm 2/Vs as shown in Fig. 1 [1]. When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm3, the mobility decreases in Si to μ h =150cm2/Vs and μ e =300cm2/Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to μ h =400cm2/Vs and μ e =1000cm 2/Vs a decrease of 80% for both but compared to Si, an increase in μ h by 2.7x and μ e by 3.3x.",
author = "John Borland and Chaung, {Shang Shuin} and Tseng, {Tseung Yuen} and Abhijeet Joshi and Bulent Basol and Lee, {Yao Jen} and Takashi Kuroi and Gary Goodman and Nadya Khapochkina and Temel Buyuklimanli",
year = "2019",
month = jun,
doi = "10.23919/IWJT.2019.8802624",
language = "English",
series = "19th International Workshop on Junction Technology, IWJT 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "19th International Workshop on Junction Technology, IWJT 2019",
address = "United States",
note = "null ; Conference date: 06-06-2019 Through 07-06-2019",
}