Comparative study of high-field endurance for reoxidized-nitrided and fluorinated oxides

Z. H. Liu*, P. Nee, P. K. Ko, Chen-Ming Hu, C. G. Sodini, B. J. Gross, T. P. Ma, Y. C. Cheng

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Time dependent dielectric breakdown (TDDB) characteristics of reoxidized-nitrided and fluorinated oxide thin films (110A) were examined under electric field and temperature accelerations. Compared with conventional thermal oxides, these oxides have comparable impact ionization coefficients and activation energies, though the charge-to-breakdown are somewhat improved. This finding suggests that the established theory for projecting the minimum thickness of conventional oxide is still applicable to these films. Charge trapping experiments showed that both positive and negative charge trapping can be remarkably reduced by the reoxidation/nitridation process. However, no obvious defect density reduction has been observed for both oxides.

Original languageEnglish
Pages26-28
Number of pages3
StatePublished - 1 Jan 1991
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 27 Aug 199129 Aug 1991

Conference

Conference23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period27/08/9129/08/91

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