Time dependent dielectric breakdown (TDDB) characteristics of reoxidized-nitrided and fluorinated oxide thin films (110A) were examined under electric field and temperature accelerations. Compared with conventional thermal oxides, these oxides have comparable impact ionization coefficients and activation energies, though the charge-to-breakdown are somewhat improved. This finding suggests that the established theory for projecting the minimum thickness of conventional oxide is still applicable to these films. Charge trapping experiments showed that both positive and negative charge trapping can be remarkably reduced by the reoxidation/nitridation process. However, no obvious defect density reduction has been observed for both oxides.
|Number of pages||3|
|State||Published - 1 Jan 1991|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 27 Aug 1991 → 29 Aug 1991
|Conference||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||27/08/91 → 29/08/91|