Comparative Study of Fully Depleted and Body-Grounded Non Fully Depleted SOI MOSFET's for High Performance Analog and Mixed Signal Circuits

Mansun Chan, Bin Yu, Zhi Jian Ma, Cuong T. Nguyen, Chen-Ming Hu, Ping K. Ko

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

This paper compared the performance of conventional fully depleted (FD) SOI MOSFET's and body-grounded non fully depleted (NFD) SOI MOSFET's for analog applications. A new low-barrier body-contact (LBBC) technology has been developed to provide effective body contact. Experimental results show that the NFD MOSFET's with LBBC structure give one order of magnitude higher output resistance, significantly lower flicker noise, improved subthreshold characteristics, and minimal threshold voltage variation compared with conventional FD SOI MOSFET's. The device characteristics of the LBBC MOSFET's are more desirable for fabricating high performance analog or mixed analog/digital CMOS circuits.

Original languageEnglish
Pages (from-to)1975-1981
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume42
Issue number11
DOIs
StatePublished - 1 Jan 1995

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