A comparative study of advanced MOSFET structures that have been proposed for around 0.1μm generation in the subjects of short-channel effect, drain saturation current, and relative gate delay, is carried out. The approach used emphasizes compact analytical models and parametric comparison. These heuristic and analytic models are guided by experimental and simulation data. Based on these models, key device design parameters are extracted and compared. Overall, the approach used provides good insight for device design, quick figure-of-merit, and a framework for analyzing a wide variety of MOSFETs.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Jan 1996|
|Event||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 11 Jun 1996 → 13 Jun 1996