Comparative study of advanced MOSFET structures

Clement H. Wann*, Rob Tu, Bin Yu, Chen-Ming Hu, Kenji Noda, Tetsu Tanaka, Makoto Yoshida, Kelvin Hui

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

A comparative study of advanced MOSFET structures that have been proposed for around 0.1μm generation in the subjects of short-channel effect, drain saturation current, and relative gate delay, is carried out. The approach used emphasizes compact analytical models and parametric comparison. These heuristic and analytic models are guided by experimental and simulation data. Based on these models, key device design parameters are extracted and compared. Overall, the approach used provides good insight for device design, quick figure-of-merit, and a framework for analyzing a wide variety of MOSFETs.

Original languageEnglish
Pages (from-to)32-33
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Jan 1996
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 11 Jun 199613 Jun 1996

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