Comparative leakage analysis of GeOI FinFET and Ge bulk FinFET

Vita Pi Ho Hu, Ming Long Fan, Pin Su, Ching Te Chuang

Research output: Contribution to journalArticle

17 Scopus citations


We present a comparative leakage analysis of germanium-on-insulator (GeOI) FinFET and germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit levels. Band-to-band tunneling (BTBT) leakage-induced bipolar effect is found to result in an amplified BTBT leakage for GeOI FinFET. Device and circuit designs to mitigate the amplified BTBT leakage of GeOI FinFETs are suggested. The effectiveness of various high threshold voltage technology options including increasing channel doping, increasing gate length and drain-side underlap for leakage reduction is analyzed.

Original languageEnglish
Article number6588890
Pages (from-to)3596-3600
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - 2 Oct 2013


  • Band-to-band tunneling (BTBT) leakage
  • FinFET
  • Germanium
  • Germanium-on-insulator (GeOI)

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