Compact models of negative-capacitance FinFETs: Lumped and distributed charge models

Juan P. Duarte, Sourabh Khandelwal, Asif I. Khan, Angada Sachid, Yen Kai Lin, Huan Lin Chang, Sayeef Salahuddin, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

38 Scopus citations

Abstract

This work presents insights into the device physics and behaviors of ferroelectric based negative capacitance FinFETs (NC-FinFETs) by proposing lumped and distributed compact models for its simulation. NC-FinFET may have a floating metal between ferroelectric (FE) and the dielectric layers and the lumped charge model represents such a device. For a NC-FinFET without a floating metal, the distributed charge model should be used and at each point in the channel the ferroelectric layer will impact the local channel charge. This distributed effect has important implications on device characteristics as shown in this paper. The proposed compact models have been implemented in circuit simulators for exploring circuits based on NC-FinFET technology.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages30.5.1-30.5.4
ISBN (Electronic)9781509039012
DOIs
StatePublished - 31 Jan 2017
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 3 Dec 20167 Dec 2016

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period3/12/167/12/16

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