Compact models for sub-22nm MOSFETs

Y. S. Chauhan*, D. D. Lu, S. Venugopalan, M. A. Karim, A. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

FinFET and UTBSOI (or ETSOI) FET are the two promising multi-gate FET candidates for sub-22nm CMOS technology. The BSIM-CMG and BSIM-IMG are the surface potential based physical compact models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent double-gate MOSFET capturing threshold voltage variation with back gate bias. Both models have been verified by simulation /measurements and show excellent results for all types of real device effects like SCE, DIBL, mobility degradation, poly depletion, QME etc.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages720-725
Number of pages6
StatePublished - 23 Nov 2011
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: 13 Jun 201116 Jun 2011

Publication series

NameTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume2

Conference

ConferenceNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period13/06/1116/06/11

Keywords

  • BSIM-CMG
  • BSIM-IMG
  • Compact model
  • FinFET
  • MOSFET
  • UTBSOI

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