Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs

Sriramkumar Venugopalan*, Muhammed A. Kari, Ali M. Niknejad, Chen-Ming Hu, Darsen D. Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

A novel geometrically scalable, phenomenological model for quantum mechanical carrier charge centroid in thin fins is presented. A model for capturing the capacitance characteristics of a graded double-junction arising out of punchthrough stop implant in bulk-FinFETs is also proposed. Developed models have been included in BSIM-CMG multi-gate transistor compact model.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages292-295
Number of pages4
ISBN (Electronic)9780615717562
StatePublished - Sep 2012
Event2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States
Duration: 5 Sep 20127 Sep 2012

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
CountryUnited States
CityDenver
Period5/09/127/09/12

Keywords

  • BSIM-CMG
  • Compact Model
  • Double Junction Capacitance
  • FinFET
  • Quantum Mechanical Confinement

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    Venugopalan, S., Kari, M. A., Niknejad, A. M., Hu, C-M., & Lu, D. D. (2012). Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings (pp. 292-295). (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc..