Compact modeling of variation in FinFET SRAM cells

Darsen D. Lu, Chung Hsun Lin, Ali M. Niknejad, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


Editor's note: FinFET technology is a possible solution to achieve a better power/performance trade-off for SRAM cells. This article provides a comprehensive analysis of the variations in FinFET devices, their impact on SRAM stability, and a statistical design procedure for FinFET SRAM cells.

Original languageEnglish
Article number5432322
Pages (from-to)44-50
Number of pages7
JournalIEEE Design and Test of Computers
Issue number2
StatePublished - 1 Mar 2010


  • Compact modeling
  • Design and test
  • Design for manufacturing
  • FinFET
  • Multigate MOSFETs
  • SRAM
  • Variability

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