Compact modeling of flicker noise variability in small size MOSFETs

Tanvir H. Morshed, Mohan V. Dunga, Jodie Zhang, Darsen D. Lu, Ali M. Niknejad, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

A compact model has been developed to capture the variability of flicker noise resulting from the reduction in size of state of the art MOSFETs. The underlying physics of flicker noise in small area MOSFETs has been verified by two means: Monte Carlo simulation and analytic modeling. The statistical distribution of flicker noise is reported for the first time, supported by experimental data from two sets of devices with different areas. The developed model is capable of predicting the area dependence of noise at any frequency at desired %Yield.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs
StatePublished - 1 Dec 2009
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 7 Dec 20099 Dec 2009

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period7/12/099/12/09

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