Compact modeling of FinFETs featuring independent-gate operation mode

C. H. Lin*, X. Xi, J. He, L. Chang, R. Q. Williams, M. B. Kelchen, W. E. Haensch, M. Dunga, S. Balasubramanian, A. M. Niknejad, M. Chan, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations
Original languageEnglish
Title of host publication2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
Pages120-121
Number of pages2
DOIs
StatePublished - 31 Oct 2005
Event2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan
Duration: 25 Apr 200527 Apr 2005

Publication series

Name2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Conference

Conference2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
CountryTaiwan
CityHsinchu
Period25/04/0527/04/05

Cite this

Lin, C. H., Xi, X., He, J., Chang, L., Williams, R. Q., Kelchen, M. B., Haensch, W. E., Dunga, M., Balasubramanian, S., Niknejad, A. M., Chan, M., & Hu, C-M. (2005). Compact modeling of FinFETs featuring independent-gate operation mode. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers (pp. 120-121). [T77] (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers). https://doi.org/10.1109/VTSA.2005.1497105