Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect

Yogendra Sahu, Pragya Kushwaha, Avirup Dasgupta, Chen-Ming Hu, Yogesh Singh Chauhan

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this paper, we present an analytical charge-based model for thermal noise power spectral density in fully depleted silicon on insulator (FDSOI) MOSFETs. Two important aspects particular to FDSOI technology, namely, different inversion charges and different effective mobilities at front and back interfaces, are considered in the model. Proposed model is valid from weak to strong inversion regions of operation. Velocity saturation and channel length modulation are also incorporated to properly capture the excess noise in deep submicrometer MOSFETs. To test the quality of the model, standard benchmark tests are performed and asymptotic behavior of the model is validated in all regions of operation. The model is implemented in SPICE and validated with calibrated TCAD simulations as well as with experimental data of high frequency noise for wide range of back biases.

Original languageEnglish
Article number7867078
Pages (from-to)2261-2270
Number of pages10
JournalIEEE Transactions on Microwave Theory and Techniques
Volume65
Issue number7
DOIs
StatePublished - 1 Jul 2017

Keywords

  • Compact model
  • fully depleted silicon on insulator (FDSOI) MOSFET
  • high-frequency (HF) noise parameters thermal noise

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