Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D Transition

Avirup Dasgupta*, Priyank Rastogi, Amit Agarwal, Chen-Ming Hu, Yogesh Singh Chauhan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We model the effects of cross-sectional radius scaling on C-V and I-V characteristics of gate-All-Around FETs (GAAFETs), capturing the continuous transition from a 3-D electron system to a 1-D electron system. We have obtained computationally efficient models for effective mass, bandgap, and subband energies as functions of the cross-sectional radius and gate voltage based on simple approximate analytic expressions. Together, they provide a compact model for VLSI circuit simulation, especially for analog and RF circuits that will be seriously affected by the new humps and peaks in C-V and I-V introduced by the subbands. The model has been validated with κ p-based technology computer aided design simulations as well as measured data. To the best of our knowledge, this is the first compact model capturing cross-sectional size-dependent dimensional crossover (3-D to 1-D) in I-V and C-V for GAAFETs.

Original languageEnglish
Pages (from-to)1094-1100
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume65
Issue number3
DOIs
StatePublished - 1 Mar 2018

Keywords

  • Bandgap
  • compact model
  • density of states (DOS)
  • dimensional crossover
  • effective mass
  • gate-All-Around
  • nanowire
  • quantum capacitance
  • SPICE
  • subband energy

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