Compact modeling for the changing transistor

Chen-Ming Hu

doi:10.1109/SISPAD.2013.6650571

Compact modeling for the changing transistor

Chen-Ming Hu^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Compact model is not only a tool for IC design but also the unique bridge between IC manufacturing and design. It needs not only a mathematical model of a prototype transistor but also accurate models of many real device effects of the modern transistor. Compact model can address not only circuit performance but also reliability. BSIM and BERT are used as examples.

Original language	English
Title of host publication	2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages	49-52
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2013.6650571
State	Published - 31 Dec 2013
Event	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom Duration: 3 Sep 2013 → 5 Sep 2013

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Country	United Kingdom
City	Glasgow
Period	3/09/13 → 5/09/13

Keywords

compact model
FinFET
MOSFET
reliability
SPICE

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10.1109/SISPAD.2013.6650571

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Cite this

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Hu, C-M 2013, Compact modeling for the changing transistor. in 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013., 6650571, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 49-52, 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013, Glasgow, United Kingdom, 3/09/13. https://doi.org/10.1109/SISPAD.2013.6650571

Compact modeling for the changing transistor. / Hu, Chen-Ming.

2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. 2013. p. 49-52 6650571 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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