Using embedded SRAM as a path, FinFET may enter manufacturing at 32nm. FinFET provides several advantages over the planar MOSFET structure-smaller size, larger current, smaller leakage, and less variation in threshold voltage. A compact model of multi-gate transistors will facilitate their adoption. BSIM-MG is a surface-potential based compact model of multi-gate MOSFETs fabricated on either SOI or bulk substrates. The effects of body doping are modeled. It can also model a double-gate transistor with independently biased front and back gates and asymmetric front and back gate work-functions and dielectric thicknesses.
|Number of pages||4|
|State||Published - 1 Jan 2007|
|Event||12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria|
Duration: 25 Sep 2007 → 27 Sep 2007
|Conference||12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007|
|Period||25/09/07 → 27/09/07|