Compact Model for Geometry Dependent Mobility in Nanosheet FETs

Avirup Dasgupta*, Shivendra Singh Parihar, Harshit Agarwal, Pragya Kushwaha, Yogesh Singh Chauhan, Chenming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We propose an updated compact model for mobility in Nanosheet FETs. This is necessary since Nanosheet FETs exhibit significant mobility degradation with thickness and width scaling caused by centroid shift, changing effective mass due to quantum confinement as well as various crystal orientations of the various conduction planes. The model takes all of these effects into account. It has been implemented in Verilog-A and validated with experimental data. To the best of our knowledge, this is the first compact model capturing the effect of nanosheet scaling on mobility.

Original languageEnglish
Article number8963619
Pages (from-to)313-316
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number3
DOIs
StatePublished - Mar 2020

Keywords

  • centroid
  • compact model
  • gate-all-around
  • mobility
  • mobility degradation
  • Nanosheet
  • quantum

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