Compact CPW-MS-CPW two-stage pHEMT amplifier compatible with flip chip technique in V-band frequencies

Jen Y. Su*, Chin-Chun Meng, Yueh Ting Lee, Guo W. Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The V-band coplanar waveguide (CPW)-microstrip line (MS)-CPW two-stage amplifier with the flip-chip bonding technique is demonstrated using 0.15 μm AlGaAs/InGaAs pseudomorphic high electron mobility transistor technology. The CPW is used at input and output ports for flip-chip assemblies and the MS transmission line is employed in the interstage to reduce chip size. This two-stage amplifier employs transistors as the CPW-MS transition and the MS-CPW transition in the first stage and the second stage, respectively. The CPW-MS-CPW two-stage amplifier has a gain of 14.8 dB, input return loss of 10 dB and output return loss of 22 dB at 53.5 GHz. After the flip-chip bonding, the measured performances have almost the same value.

Original languageEnglish
Pages (from-to)112-114
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume18
Issue number2
DOIs
StatePublished - 1 Feb 2008

Keywords

  • Coplanar waveguide (CPW)
  • Flip-chip bonding
  • Microstrip line (MS)
  • Pseudomorphic high electron mobility transistor (pHEMT)

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