Communication—Potential of the π-gate InAs HEMTs for high-speed and low-power logic applications

Jing Neng Yao*, Yueh Chin Lin, Ying Chieh Wong, Ting Jui Huang, Heng-Tung Hsu, Simon M. Sze, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Composite channel (In0.65Ga0.35As/InAs/ In0.65Ga0.35As) high electron mobility transistors (HEMTs) with π-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the π-gate device for evaluation. The π-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and ION/IOFF ratio of 3 × 104 at VDS = 0.5 V at room temperature. These results indicated that the designed π-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications.

Original languageEnglish
Pages (from-to)P319-P321
Number of pages3
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number6
DOIs
StatePublished - 7 Jun 2019

Keywords

  • IMPACT IONIZATION; PERFORMANCE; TRANSISTOR; CMOS

Fingerprint Dive into the research topics of 'Communication—Potential of the π-gate InAs HEMTs for high-speed and low-power logic applications'. Together they form a unique fingerprint.

Cite this