Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements'

Juhn-Jong Lin*, Chih Yuan Wu

*Corresponding author for this work

Research output: Contribution to journalComment/debate

Abstract

We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.

Original languageEnglish
Article number468001
JournalNanotechnology
Volume20
Issue number46
DOIs
StatePublished - 9 Nov 2009

Fingerprint Dive into the research topics of 'Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements''. Together they form a unique fingerprint.

Cite this