The combined effects of N 2-implantation at S/D extension and N 2O oxide on 0.18 μm n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N 2O oxide or N 2-implantation. However, for p-channel transistors, opposite trends are observed for N 2O oxide and N 2-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N 2O oxide and N 2-implantation.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||12 A|
|State||Published - 1 Dec 1999|