Combination effects of nitrogen implantation at S/D extension and N 2 O oxide on 0.18 μm n- and p-MOSFETs

Tien-Sheng Chao*, Chao-Hsin Chien, S. K. Chiao, Horng-Chih Lin, M. C. Liaw, L. P. Chen, T. Y. Huang, T. F. Lei, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to conferencePaper

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Abstract

In this paper, we report the combination effects of nitrogen implantation at S/D extension and N 2 O gate oxide on 0.18 μm n- and p-MOSFETs. It is found that Vt-roll-off is enhanced by nitrogen incorporation which also results in large DIBL in deep submicron device. On the other hand, improvement is found for nitrogen incorporation in terms of junction leakage, reliability, and interfacial quality for nMOSFET. Improvement of Q bd , C inv /C ox and reliability are observed for pMOSFETs.

Original languageEnglish
Pages316-320
Number of pages5
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
Duration: 3 Jun 19975 Jun 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, China
Period3/06/975/06/97

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    Chao, T-S., Chien, C-H., Chiao, S. K., Lin, H-C., Liaw, M. C., Chen, L. P., Huang, T. Y., Lei, T. F., & Chang, C. Y. (1997). Combination effects of nitrogen implantation at S/D extension and N 2 O oxide on 0.18 μm n- and p-MOSFETs. 316-320. Paper presented at Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications, Taipei, China, .