Collective movement of three million plus Au atoms on a silicon bicrystal

C. H. Liu, Wen-Wei Wu, L. J. Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The movement of nanosized Au clusters on Si bicrystal was found to be critically influenced by strained fields of the buried twist-dislocation network by in situ ultrahigh vacuum transmission electronic microscopy. Collective movement of Au atoms was observed. Most strikingly, clusters of more than three million atoms move concertedly by one dislocation spacing (7-45 nm) within 130 s at a substrate temperature of 250 °C. The "jumping" mechanism is attributed to the viscous flow. The observation shall serve as a good reference to refine the theory to realize the control of self-organized nanoparticles on silicon bicrystals.

Original languageEnglish
Article number023117
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number2
DOIs
StatePublished - 23 Jan 2006

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