Coherent tunneling in a semiconductor system: Double barrier resonant-tunneling structure built in the Schottky barrier

Sheng-Di Lin, C. P. Lee, V. V. Ilchenko, D. I. Sheka, O. V. Tretyak, A. M. Korol, I. V. Nosenko

Research output: Contribution to journalArticle

Abstract

Resonant-tunneling processesing electrons in a system consisting of the double-barrier resonant-tunneling structure built in the Schottky barrier are studied. It is shown that the coherent tunneling can take place in this system; both the transmission rates of electrons and the current-voltage characteristic are evaluated and analyzed for such a case. The theoretical results agree perfectly well with the data obtained from the especially performed experiment.

Original languageEnglish
Pages (from-to)294-297
Number of pages4
JournalJournal of Physical Studies
Volume11
Issue number3
StatePublished - 1 Dec 2007

Keywords

  • Double barrier
  • Resonant-tunneling current
  • Schottky barrier
  • Transmission rates

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