Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory

Chih Wei Hu*, Ting Chang Chang, Chun Hao Tu, Pei Kun Shueh, Chao Cheng Lin, Simon M. Sze, Tseung-Yuen Tseng, Min Chen Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Co nanodot memory devices formed by oxidation processes were studied. Transmission electron microscopy and x-ray photoelectron spectroscopy analyses showed that overoxidation of the cobalt and silicon degraded the charge-storage ability seriously. However, a precapped oxide can mildly oxidize the CoSi 2 film to protect the overoxidation to occur. In addition, an oxygen-incorporated CoSi2 film is proposed to improve the oxidation process further. Through incorporating the limited oxygen during sputtering process, the Co nanodot memory device obtains a larger memory window. Also, the reliability characteristic of the Co nanodot memory device formed by annealing the oxygen-incorporated CoSi2 film has been demonstrated.

Original languageEnglish
Article number102106
JournalApplied Physics Letters
Volume94
Issue number10
DOIs
StatePublished - 24 Mar 2009

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